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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9085/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 20 Watts Power Gain -- 17.9 dB Efficiency -- 28% Adjacent Channel Power -- 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF9085LR3 MRF9085LSR3 880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9085LSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 250 1.43 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.7 Unit C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9085LR3 MRF9085LSR3 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model MRF9085LR3 MRF9085LSR3 Class 1 (Minimum) M2 (Minimum) M1 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) (1) Part is internally input matched. Coss Crss -- -- 73 2.9 -- -- pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2.0 -- -- -- -- 3.7 0.19 8.0 4.0 -- 0.4 -- Vdc Vdc Vdc S MRF9085LR3 MRF9085LSR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 -- dB Symbol Min Typ Max Unit 36 40 -- % IMD -- - 31 - 28 dBc IRL -- - 21 -9 dB Freescale Semiconductor, Inc... Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Power Output, 1 dB Compression Point, CW (1) (VDD = 26 Vdc, IDQ = 700 mA, f1 = 960 MHz) Gps -- 17.9 -- dB -- 40.0 -- % IMD -- - 31 -- dBc IRL -- - 16 -- dB P1dB -- 105 -- W Gps -- 17.5 -- dB -- 51 -- % No Degradation In Output Power -- 105 -- W P1dB (1) These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9085LR3 MRF9085LSR3 3 Freescale Semiconductor, Inc. VGG + + C7 C8 C9 L1 L2 C16 B1 B2 B3 + C17 + C18 + C19 VDD + C11 RF INPUT C6 Z1 C1 C4 C3 C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C10 DUT C12 C13 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 C15 C14 Z20 RF OUTPUT Freescale Semiconductor, Inc... B1, B2, B3 C1, C9, C15, C16 C3 C4, C13 C5, C6, C12 C7, C17, C18, C19 C8 C10, C11 C14 L1 L2 N1, N2 WB1, WB2 Z1 Z2 Z3 Z4 Z5 Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case , ATC 5.6 pF Chip Capacitor, B Case, ATC 0.8 - 8.0 Variable Capacitors, Gigatrim 8.2 pF Chip Capacitors, B Case, ATC 10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet 20 K pF Chip Capacitor, B Case, ATC 16 pF Chip Capacitors, B Case, ATC 0.6 - 4.5 Variable Capacitor, Gigatrim 7.15 nH Inductor, Coilcraft 17.5 nH Inductor, Coilcraft N - Type Panel Mount, Stripline, M/A - Com 5 Mil BeCu Shim (0.225 x 0.525) 0.219 x 0.080 Microstrip 0.150 x 0.080 Microstrip 0.851 x 0.080 Microstrip 0.125 x 0.220 Microstrip 0.123 x 0.220 Microstrip Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 PCB 0.076 x 0.220 Microstrip 0.261 x 0.220 Microstrip 0.220 x 0.630 x 0.200 Taper 0.240 x 0.630 Microstrip 0.060 x 0.630 Microstrip 0.067 x 0.630 Microstrip 0.233 x 0.630 Microstrip 0.630 x 0.220 x 0.200 Taper 0.200 x 0.220 Microstrip 0.055 x 0.220 Microstrip 0.088 x 0.220 Microstrip 0.226 x 0.220 Microstrip 0.868 x 0.080 Microstrip 0.129 x 0.080 Microstrip 0.223 x 0.080 Microstrip Arlon GX - 0300 - 55 - 22, 30 mils r = 2.55 Figure 1. 865 - 895 MHz Broadband Test Circuit Schematic C7 VGG B1 C8 B2 C6 C11 B3 C17 V DD C19 C16 C18 L2 C15 C1 C9 WB1 L1 C3 C4 C5 WB2 C12 C14 CUTOUT C10 C13 MRF9085 Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout MRF9085LR3 MRF9085LSR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 2.00 1.75 1.50 1.25 1.00 VSWR 3rd Order 5th Order 19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 860 865 870 875 880 885 f, FREQUENCY (MHz) 890 895 900 IMD Gps h VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 700 mA Two-Tone, 100 kHz Tone Spacing 50 45 40 35 -28 -30 -32 -34 -36 VSWR Freescale Semiconductor, Inc... Figure 3. Class AB Broadband Circuit Performance h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 19 Gps 17 G ps , POWER GAIN (dB) 15 h 13 11 9 7 VDD = 26 Vdc IDQ = 700 mA f1 = 880.0 MHz f2 = 880.1 MHz IMD 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 60 40 20 0 -20 -40 -60 -10 -20 -30 -40 VDD = 26 Vdc IDQ = 700 mA f1 = 800.0 MHz f2 = 800.1 MHz 7th Order -50 -60 -70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain, Efficiency, IMD versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 Gps 60 50 h , DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 40 30 VDD = 26 Vdc IDQ = 700 mA f = 880 MHz Single Tone 20 10 0 19 17 15 13 11 Gps h VDD = 26 Vdc IDQ = 700 mA f = 880 MHz 40 h, DRAIN EFFICIENCY (%) & ACPR (dB) 20 0 -20 -40 750 kHz 9 7 -60 1.98 MHz -80 1 10 Pout, OUTPUT POWER (WATTS) AVG. h 1 10 100 Pout, OUTPUT POWER (WATTS) CW AVG. Figure 6. Power Gain, Efficiency versus Output Power Figure 7. Power Gain, Efficiency, ACPR versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9085LR3 MRF9085LSR3 5 Freescale Semiconductor, Inc. Zload f = 865 MHz f = 895 MHz Zo = 2 Zsource f = 895 MHz Freescale Semiconductor, Inc... f = 865 MHz VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP f MHz 865 880 895 Zsource 1.35 - j1.92 1.33 - j1.66 1.28 - j1.30 Zload 1.26 - j0.15 1.26 - j0.10 1.21 - j0.20 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 8. Series Equivalent Input and Output Impedance MRF9085LR3 MRF9085LSR3 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) Freescale Semiconductor, Inc... H ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF9085LR3 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE F NI - 780S MRF9085LSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9085LR3 MRF9085LSR3 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9085LR3 MRF9085LSR3 8 For More Information On This Product, Go to: www.freescale.com MRF9085/D MOTOROLA RF DEVICE DATA |
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